Samsung Electronics Co., Ltd., a leader in advanced semiconductor technology, today announced that it has solidified its leadership position in the server memory market with a new 8GB product offering. Following the introduction of its
8GB Registered Dual In-line Memory Module (R-DIMM) in October, Samsung has now increased the density of its Fully Buffered Dual In-line Memory Module product line-up (FB-DIMM) to include 8GBs by adopting 80 nanometer 2Gb DDR for high-speed servers. This represents a significant leap forward in advanced server memory architecture.
OEMs that use Samsung’s high-density memory can increase the amount of installed memory and keep slots in reserve for future upgrades. Samsung memory such as the new 8GB FB-DIMM is ideal for space-constrained applications in blade and 1U servers.
The FB-DIMM architecture overcomes the previous limitation of two-to-four module capacity per channel.
A FB-DIMM system’s DRAM module content can be increased to as many as eight modules without reducing the speed. The new system can also process an increased amount of data at the same time with the advanced memory buffer (AMB) chip connecting each module in the system point to point. As a result, the server market demand for high density DRAMs is expected to increase significantly.
With Samsung’s high-density memory modules, designers can take full advantage of increased memory support in the latest server operating system to maximize performance. In addition, Samsung is offering next-generation memory solutions such as the 8GB FB-DIMM to allow servers to benefit from ultimate memory density and bandwidth.
Samsung’s complete product portfolio includes all variations of DRAM memory from DDR to DDR2, and R-DIMMs to FB-DIMMs with densities ranging from 512MB all the way to 8GBs.
For those of us with an insatiable appetite for memory, this may fulfill it for a while.